Method of manufacturing non-shrinking multilayer ceramic substrate

ABSTRACT

Disclosed is a method of manufacturing a nonshrinking multilayer ceramic substrate. The method includes forming at least one conductive via and an electrode pattern in at least one of a plurality of ceramic green sheets, laminating the ceramic green sheets to form a ceramic laminate, selectively forming a shrinkage inhibiting thin film of sinter-resistant powder on a region including the conductive via and a periphery thereof in at least one of two surfaces of the ceramic laminate using aerosol deposition, disposing a shrinkage inhibiting green sheet for suppressing the shrinkage of the ceramic laminate on at least one of the two surfaces of the ceramic laminate including the shrinkage inhibiting thin film to form a non-sintered multilayer ceramic substrate, and sintering the non-sintered multilayer ceramic substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the priority of Korean Patent Application No.2008-0104467 filed on Oct. 23, 2008, in the Korean Intellectual PropertyOffice, the disclosure of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of manufacturing anon-shrinking multilayer ceramic substrate, and more particularly, to amethod of manufacturing a non-shrinking multilayer ceramic substrate,which can prevent a conductive via connecting interlayer circuits fromprotruding and inhibit the formation of a void in a via hole inmanufacturing a multilayer ceramic substrate through a non-shrinkageprocess.

2. Description of the Related Art

In general, a multilayer ceramic substrate employing glass-ceramic hashigh flexibility in terms of design because it allows the implementationof interlayer circuits having a three-dimensional structure. Multilayerceramic substrates are increasingly utilized in the market of smallerand higher-performing high frequency components. With multilayer ceramicsubstrates becoming more complicated and precise, inner patterns and viastructures have less margin in design and thus non-shrinkage sinteringis required to suppress transverse shrinkage of the multilayer ceramicsubstrate.

To this end, a soluble green sheet of a sinter-resistant material, whichis not sintered at a sintering temperature of a ceramic substratematerial, is bonded to at least one of two surfaces of a non-sinteredceramic laminate in order to suppress the shrinkage of the ceramiclaminate in the x-y direction.

However, for the electrical connection between interlayer circuits, aplurality of via holes are formed in a multilayer ceramic substrateobtained by laminating a plurality of ceramic green sheets on top ofeach other. The via holes are filled with a conductive electrodematerial.

A conductive via, formed of conductive metal powder, an organic binderand a solvent, shrinks in volume due to the sintering process. Becausethe conductive metal powder shrinks to a greater extent than the ceramicin the sintering process, the via hole and the conductive via areseparated from each other due to the different shrinkage rates thereof,creating a large void in the via hole, even if the via hole iscompletely filled with the conductive electrode material before thesintering process.

Particularly, the conductive via, when sintered, shrinks in thecircumferential direction and thus shrinks less in the thicknessdirection because of the green sheets which serve to inhibit shrinkagein the non-shrinkage process but have small shrinkage inhibiting effectson the non-sintered ceramic laminate. As a result, the conductive viabecomes higher than the via hole after the sintering process, therebyprotruding to the outside and creating a void in the via hole.

To prevent the formation of the void in the via hole resulting from thesintering process, the via hole may be filled with an excessive amountof conductive electrode material exceeding the volume of the via hole inthe green state. However, this causes the conductive electrode materialto flow over the via hole during the laminating or pressurizing process,and thus results in short circuits between layers of the substrate orthe peeling of the layers, degrading the product yield.

FIGS. 1A and 1B are cross-sectional views illustrating examples ofdefects in a conductive via after non-shrinkage sintering in themanufacturing of a non-shrinking multilayer ceramic substrate accordingto the related art. A non-sintered multilayer ceramic substrate may beobtained by forming via holes in ceramic green sheets through punchingor the like, filling the via holes with conductive electrode paste, andthen laminating and thermally compressing the ceramic green sheets.Shrinkage inhibiting green sheets made of sinter-resistant powder arebonded to two surfaces of the non-sintered multilayer ceramic substrate.Thereafter, non-shrinkage sintering is performed on the resultantstructure, thereby fabricating a multilayer ceramic substrate.

In non-shrinkage sintering, the constraining force of the shrinkageinhibiting green sheet is weaker on and around the conductive via thanon the ceramic green sheet. This is because the material contacting theshrinkage inhibiting green sheet in the conductive via, which breaks thecontinuity of the ceramic green sheet, is the conductive electrode pasteof the conductive via, not a low temperature co-fired ceramic material.Consequently, defects occur around the conductive via after sinteringbecause of the difference in shrinkage behavior in the circumferentialdirection.

Accordingly, as shown in FIG. 1A, avoid (A) is generated in the via holeas the conductive via shrinks in the circumferential direction becauseof the small constraining force acting thereon from the shrinkageinhibiting green sheet. Also, the shrinkage of the conductive via isless than desired in the thickness direction due to its shrinkage in thecircumferential direction. For this reason, the conductive via becomesrelatively thicker than the multilayer ceramic substrate, therebyprotruding above the substrate after sintering.

As for another example of the defect, as shown in FIG. 1B,sinter-resistant powder, serving to inhibit the shrinkage of theconductive via, is added to obstruct the volume shrinkage of theconductive via, so that the formation of a void can be prevented fromoccurring. However, since the sinter-resistant powder is used to inhibitthe shrinkage of the conductive via, the low density (C) of theconductive via occurs due to an organic binder and a solvent added tothe conductive electrode paste.

SUMMARY OF THE INVENTION

An aspect of the present invention provides a method of manufacturing anon-shrinking multilayer ceramic substrate, which can enhance shrinkageconstraining force acting around a conductive via by forming a shrinkageinhibiting thin film tightly attached around the conductive via throughan aerosol deposition method, which ensures the formation of a thin filmhaving a high density, so that the conductive via can be physicallyprevented from protruding and the formation of a void in the via holecan be inhibited.

According to an aspect of the present invention, there is provided amethod of manufacturing a nonshrinking multilayer ceramic substrate, themethod including: forming at least one conductive via and an electrodepattern in at least one of a plurality of ceramic green sheets;laminating the ceramic green sheets on top of each other to form aceramic laminate; selectively forming a shrinkage inhibiting thin filmof sinter-resistant powder on a region including the conductive via anda periphery of the conductive via in at least one of two surfaces of theceramic laminate using aerosol deposition; disposing a shrinkageinhibiting green sheet for suppressing the shrinkage of the ceramiclaminate on at least one of the two surfaces of the ceramic laminateincluding the shrinkage inhibiting thin film to form a non-sinteredmultilayer ceramic substrate; and sintering the non-sintered multilayerceramic substrate.

The forming of the non-sintered multilayer ceramic substrate may includedisposing shrinkage inhibiting green sheets on the two surfaces of theceramic laminate including the shrinkage inhibiting thin film,respectively. The method may further include removing the shrinkageinhibiting thin film and the shrinkage inhibiting green sheet from thesintered multilayer ceramic substrate after the sintering of thenon-sintered multilayer ceramic laminate. The shrinkage inhibiting thinfilm and the shrinkage inhibiting green sheet may be removed from thesintered multilayer ceramic substrate using lapping, sand blasting,water washing or high-pressure spraying.

The forming of the ceramic laminate may include laminating the ceramicgreen sheets including the conductive via and the electrode pattern andthen thermally compressing the laminated ceramic green sheets under apressure ranging from 30 MPa to 50 MPa.

The forming of the at least one conductive via and the electrode patternmay include forming a via hole by punching using a punch, laserprocessing using a laser beam, or drilling using a drill.

The sinter-resistant powder may one of alumina (Al₂O₃), cerium dioxide(CeO₂), zinc peroxide (ZnO₂), zircornia (ZrO₂), magnesia (MgO) and boronnitride (BN). The sinter-resistant powder may have an average diameterranging from 0.3 μm to 1 μm.

The selective forming of the shrinkage inhibiting thin film may includedisposing a pattern mask on at least one of the two surfaces of theceramic laminate to expose the region including the conductive via andthe periphery of the conductive via, and depositing the shrinkageinhibiting thin film only on the region, exposed by the pattern mask, inthe at least one of the two surfaces of the ceramic laminate. Theexposed region may be a region including at least the conductive via.

The selective forming of the shrinkage inhibiting thin film may includedepositing the shrinkage inhibiting thin film on the entirety of the atleast one of the two surfaces of the ceramic laminate. The shrinkageinhibiting thin film may have a diameter ranging from 100 μm to 500 μm.The shrinkage inhibiting thin film may have a thickness ranging from 3μm to 20 μm.

The sinter-resistant powder and the shrinkage inhibiting green sheet maybe sintered at a higher sintering temperature than the non-sinteredmultilayer ceramic substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and other advantages of thepresent invention will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIGS. 1A and 1B are cross-sectional views illustrating examples ofdefective vias generated in manufacturing a non-shrinking multilayerceramic substrate according to the related art;

FIG. 2 is a cross-sectional view illustrating a non-sintered multilayerceramic substrate including shrinkage inhibiting green sheets andshrinkage inhibiting thin layers in the process of manufacturing anon-shrinking multilayer ceramic substrate according to an exemplaryembodiment of the present invention; and

FIGS. 3 through 8 are cross-sectional views for explaining a method ofmanufacturing a non-shrinking multilayer ceramic substrate according toan exemplary embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Exemplary embodiments of the present invention will now be described indetail with reference to the accompanying drawings. The invention may,however, be embodied in many different forms and should not be construedas being limited to the embodiments set forth herein; rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the concept of the invention to thoseskilled in the art. In the drawings, the thicknesses of layers andregions are exaggerated for clarity.

In aerosol deposition employed in the present invention, finesolid-state powder is sprayed onto a substrate so that a compact thinfilm with a high density can be formed on the substrate by the collisionenergy between the solid-state powder and the substrate.

In detail, in the aerosol deposition, a carrier gas is introduced intoan aerosol chamber containing solid-state powder. The fine solid-statepowder, suspending in the aerosol chamber, is carried by the carrier gasand sprayed onto the substrate disposed in a vacuum deposition chamber.A film with a high density is formed on the substrate by the collisionenergy between the sprayed fine solid-phase powder and the substrate.

In the process of aerosol deposition, the film formation rate reaches afew micrometers (μm) per minute, which is much faster than in anexisting thin film process. Thus, the thickness of the film can beeasily controlled within a range from sub-micron scales to tens ofmicrons. Notably, the particles sprayed at high speed, up to hundreds ofmeters per second, cause the fine solid-state powder to collide with thesubstrate, having kinetic energy corresponding to the high speed.Accordingly, strong bonds may be formed between the substrate and thefilm, and the film may be formed evenly at a desired location withoutlimitations in the shape of the substrate or the locations of the film.That is, the thin film formed using the aerosol deposition may be usedas a shrinkage inhibiting green sheet because it can be tightly coupledwith the ceramic substrate.

According to the present invention, using the aerosol deposition, a thinbut tight shrinkage inhibiting thin film is formed in the limited areaaround a conductive via, thereby preventing defective conductive viasafter non-shrinkage sintering.

FIG. 2 is a cross-sectional view of a non-sintered multilayer ceramicsubstrate including shrinkage inhibiting green sheets and shrinkageinhibiting thin films in the process of manufacturing a non-shrinkingmultilayer ceramic substrate according to an exemplary embodiment of thepresent invention.

As shown in FIG. 2, a non-sintered multilayer ceramic substrateaccording the current embodiment includes a ceramic laminate 210 formedby laminating a plurality of ceramic green sheets on which conductivevias 203 and an electrode pattern 205 are formed, shrinkage inhibitingthin films 230 serving to enhance the constraining force on and aroundthe conductive vias 203, and a shrinkage inhibiting green sheets 240 fornon-shrinkage sintering of the ceramic laminate 210.

The shrinkage inhibiting thin film 230 needs to have a constrainingforce when applied on the conductive via 203 and the periphery thereof.To this end, the shrinkage inhibiting thin film 230 needs to have agreater diameter than the conductive via 203. Here, the diameter of theshrinkage inhibiting thin film 230 ranges from at least 100 μm to 500μm. Also, the shrinkage inhibiting thin film 230 needs to be thickenough to provide the constraining force while being thin enough not tohinder the bonding of the outermost shrinkage inhibiting layer.Therefore, the shrinkage inhibiting thin film 230 may have a thicknessranging from 3 μm to 20 μm.

The shrinkage inhibiting thin film 230 is deposited on at least one oftwo surfaces of the ceramic laminate 210 by spraying sinter-resistantpowder through the aerosol deposition. In such a manner, the shrinkageinhibiting thin film 230 is deposited densely on the ceramic laminate210b with almost no voids, even before the sintering process, and isbonded to the surface of the ceramic laminate 210 with a strong bondingforce, thereby physically preventing a conductive via from protruding inthe process of sintering.

According to an aspect of the present invention, a method ofmanufacturing a nonshrinking multilayer ceramic substrate includes:forming at least one conductive via and an electrode pattern in at leastone of a plurality of ceramic green sheets; laminating the ceramic greensheets on top of each other to form a ceramic laminate; selectivelyforming a shrinkage inhibiting thin film of sinter-resistant powder on aregion including the conductive via and a periphery of the conductivevia in at least one of two surfaces of the ceramic laminate usingaerosol deposition; disposing a shrinkage inhibiting green sheet forsuppressing the shrinkage of the ceramic laminate on at least one of thetwo surfaces of the ceramic laminate including the shrinkage inhibitingthin film to form a non-sintered multilayer ceramic substrate; andsintering the non-sintered multilayer ceramic substrate.

The selective forming of the shrinkage inhibiting thin film includesdisposing a pattern mask on at least one of the two surfaces of theceramic laminate to expose the region including the conductive via andthe periphery of the conductive via, and depositing the shrinkageinhibiting thin film only on the region, exposed by the pattern mask, inthe at least one of the two surfaces of the ceramic laminate. Theexposed region may include at least the conductive via.

FIGS. 3 through 8 are cross-sectional views for explaining a method ofmanufacturing a non-shrinkage multilayer ceramic substrate according toan exemplary embodiment of the present invention.

As shown in FIG. 3, conductive vias 203 and/or an electrode pattern 205are formed in at least one of the plurality of ceramic green sheets 201.The ceramic green sheet 201 is prepared by the following manufacturingprocess. First, a predetermined resin, a dispersing agent and a mixturesolvent are added to glass-ceramic powder. The glass-ceramic powder maybe dispersed by adding a predetermined amount of dispersing agent. Anacryl-based resin may be used as the predetermined resin, and tolueneand ethanol may be used as the mixture solvent.

The resultant mixed solution is dispersed by a ball mill to produceslurry. The slurry is filtered and deareated, and a ceramic green sheethaving a desired thickness is formed using doctor blading. The ceramicgreen sheet is cut to a predetermined size, and desired printed circuitpatterns, such as a via hole and an electrode pattern, are formed. Afterthe via hole is formed in each ceramic green sheet, the via hole isfilled with conductive paste by screen printing.

As shown in FIG. 4, the ceramic green sheets 201 including theconductive vias 203 and/or the electrode pattern 205 are laminated onone another and thermally compressed, thereby forming a ceramic laminate210.

Thereafter, as shown in FIG. 5, a shrinkage inhibiting thin film isformed on one surface of the ceramic laminate 201 using the aerosoldeposition. In detail, a pattern mask 220 is mounted to allow theshrinkage inhibiting thin film to be deposited only on the required part221 of the ceramic laminate 210, that is, to expose a region covering atleast the via hole 203 and the periphery of the conductive via 203.Thereafter, sinter-resistant powder 223 is deposited on the conductivevia 203 and the periphery thereof using the aerosol deposition. Thesinter-resistant powder 223 is not sintered at a temperature of 900° C.or lower, which is a general sintering temperature of a low temperatureco-fired ceramic (LTCC), and may be one selected from the groupconsisting of alumina (Al₂O₃), cerium dioxide (CeO₂), zinc peroxide(ZnO₂), zircornia (ZrO₂), magnesia (MgO) and boron nitride (BN).Particularly, alumina, which is the same metal powder as a basicmaterial, may be used. The sinter-resistant powder 223 may have anaverage diameter ranging from 0.3 μm to 1 μm.

To harden the surface of the ceramic laminate 210 directly collidingwith the sinter-resistant powder 223, the sinter-resistant powder 223may be deposited after the ceramic laminate 210 has been compressedunder a pressure of 50 MPa or higher in advance. This is to prevent thesurface of the ceramic laminate 210 from being damaged by the kineticenergy of the sinter-resistant powder 223 colliding with the ceramiclaminate 210.

Accordingly, as shown in FIG. 6, the sinter-resistant powder 223, whichmeets the aforementioned condition, is deposited on the region includingat least the conductive via 203 in at least one of two surfaces of theceramic laminate 210 by using the aerosol deposition, thereby formingthe shrinkage inhibiting thin film 230. However, the shrinkageinhibiting thin film 230 of the present invention is not limited to thedescription, and may be formed on the entirety of at least one of thetwo surfaces of the ceramic laminate 210.

Thereafter, as shown in FIG. 7, a shrinkage inhibiting green sheet 240for suppressing shrinkage in the circumferential direction is bonded toat least one of the two surfaces of the ceramic laminate 210 includingthe shrinkage inhibiting thin film 230. Like the shrinkage inhibitingthin film 230, the shrinkage inhibiting green sheet 240 is a shrinkageinhibiting ceramic green sheet containing sinter-resistant powder thatis not sintered at a temperature of 900° C., the general sinteringtemperature of an LTCC.

The non-sintered multilayer ceramic substrate, where the shrinkageinhibiting thin film 230 and the shrinkage inhibiting green sheet 240are formed on at least one of the two surfaces of the ceramic laminate210, is sintered at a sintering temperature of 870° C. for an hour. Theshrinkage inhibiting green sheets 240 constrain the entire top andbottom of the ceramic laminate 210. Also, the shrinkage inhibiting thinfilm 230, densely formed on the conductive via 203 and the peripherythereof in the ceramic laminate 210, inhibits the shrinkage of theconductive via.

The shrinkage inhibiting thin film 230, tightly formed without voidsusing the aerosol deposition before the process of sintering, physicallyprevents the conductive via from protruding.

As shown in FIG. 8, a multilayer ceramic substrate 200 is completed inwhich the shrinkage inhibiting thin film, formed on the conductive viaand the periphery thereof, prevents the formation of a void in aninterface between the conductive via 260 and a sintered ceramic body 250and suppresses the protrusion of the conductive via after the process offiring.

As described below, a non-shrinking multilayer ceramic substrate wasmanufactured by depositing shrinkage inhibiting thin films on bothsurfaces of a ceramic laminate using the aerosol deposition under thecondition of the present invention, and then performing the sinteringprocess thereon.

[Manufacturing of a Ceramic Laminate]

To prepare a low-k ceramic green sheet constituting a ceramic laminate,an acryl-based binder and a dispersing agent were added at 15 wt % and0.5 wt % to 100% of glass-ceramic powder respectively, and a mixturesolvent of toluene and ethanol was added thereto. Thereafter, theresultant solution was dispersed using a ball mill.

A slurry obtained in the above manner was filtered and deareated, andthen a ceramic green sheet, having a thickness of 100 μm, was moldedusing doctor blading. Thereafter, the ceramic green sheet was cut in apredetermined size and punched to form a via hole with a diameter of 120μm. The via hole of the ceramic green sheet was filled with conductiveelectrode paste using screen printing, thereby forming a conductive viaand an electrode pattern. Thereafter, a plurality of green sheetsincluding the conductive vias and the electrode pattern were laminatedon top of each other and then thermally compressed, thereby fabricatingan integrated ceramic laminate.

[Deposition of Shrinkage Inhibiting Thin Film]

Thereafter, a pattern mask was mounted such that a shrinkage inhibitingthin film could be deposited only on the required part of two surfacesof the ceramic laminate, and then, alumina, sinter-resistant powder, wassprayed using the aerosol deposition, thereby forming a shrinkageinhibiting thin film on the conductive via and periphery there of. Theaverage diameter of alumina ranged from 0.3 μm to 1 μm. The ceramiclaminate was compressed in advance under a pressure of 50 MPa or higherin order to harden the surface of the ceramic laminate directlycolliding with the alumina powder.

[Bonding Between Ceramic Laminate and Shrinkage Inhibiting Green Sheet]

Shrinkage inhibiting green sheets, having a thickness of 200 μm and thesame area as the ceramic laminate, were bonded onto the two surfaces ofthe ceramic laminate including the shrinkage inhibiting thin film formedof alumina powder on the conductive via and the periphery thereof,respectively. Thereafter, the resultant structure was thermallycompressed, thereby fabricating an integrated non-sintered multilayerceramic substrate. The shrinkage inhibiting green sheets were bonded tothe two surfaces of the ceramic laminate respectively, preventing theceramic laminate from shrinking in the circumferential direction duringthe sintering process.

[Sintering]

The non-sintered multilayer ceramic substrate, where the bonding of theshrinkage inhibiting green sheets with the ceramic laminate had beencompleted, was sintered at a sintering temperature of 870° C. for anhour. Thereafter, the shrinkage inhibiting green sheets were removedfrom the resultant sintered structure. That is, after the non-sinteredmultilayer ceramic substrate was sintered, the shrinkage inhibitinggreen sheets on the two surfaces of the sintered structure, and theshrinkage inhibiting thin film on the conductive via and the peripherythereof, remained non-sintered. Thus, the remaining shrinkage inhibitingthin film and green sheets were removed from the surface of the sinteredstructure using water washing, ultrasonic washing, sand blasting orhigh-pressure spraying.

Consequently, the shrinkage inhibiting green sheets constrain the entiretop and bottom of the ceramic laminate, and the dense shrinkageinhibiting thin film suppresses the shrinkage of the conductive via andthe periphery of the conductive via in the ceramic laminate. Theshrinkage inhibiting thin film formed using the aerosol deposition isdensely disposed with almost no voids even before the sintering process,thereby physically preventing the conductive via from protruding.Accordingly, a multilayer ceramic substrate can be obtained, in which,after the sintering process, there is no void in the via hole and theconductive via does not protrude.

According to the present invention, the sinter-resistant solid-statepowder is densely attached to the conductive via and the periphery ofthe conductive via, the constraining force of which is weakened at thetime of the process of non-shrinkage sintering. Accordingly, theshrinkage constraining force on the conductive via and the peripherythereof is enhanced, thereby preventing the formation of a void in thevia hole and also preventing the conductive via from protruding due tothe shrinkage of the conductive via in the circumferential direction.Thus, interlay short-circuits and open fails caused in filling the viahole can be prevented.

While the present invention has been shown and described in connectionwith the exemplary embodiments, it will be apparent to those skilled inthe art that modifications and variations can be made without departingfrom the spirit and scope of the invention as defined by the appendedclaims.

1. A method of manufacturing a nonshrinking multilayer ceramicsubstrate, the method comprising: forming at least one conductive viaand an electrode pattern in at least one of a plurality of ceramic greensheets; laminating the ceramic green sheets on top of each other to forma ceramic laminate; selectively forming a shrinkage inhibiting thin filmof sinter-resistant powder on a region including the conductive via anda periphery of the conductive via in at least one of two surfaces of theceramic laminate using aerosol deposition; disposing a shrinkageinhibiting green sheet for suppressing the shrinkage of the ceramiclaminate on at least one of the two surfaces of the ceramic laminateincluding the shrinkage inhibiting thin film to form a non-sinteredmultilayer ceramic substrate; and sintering the non-sintered multilayerceramic substrate.
 2. The method of claim 1, wherein the forming of thenon-sintered multilayer ceramic substrate comprises disposing shrinkageinhibiting green sheets on the two surfaces of the ceramic laminateincluding the shrinkage inhibiting thin film, respectively.
 3. Themethod of claim 1, further comprising removing the shrinkage inhibitingthin film and the shrinkage inhibiting green sheet from the sinteredmultilayer ceramic substrate after the sintering of the non-sinteredmultilayer ceramic laminate.
 4. The method of claim 3, wherein theshrinkage inhibiting thin film and the shrinkage inhibiting green sheetare removed from the sintered multilayer ceramic substrate usinglapping, sand blasting, water washing or high-pressure spraying.
 5. Themethod of claim 1, wherein the forming of the ceramic laminate compriseslaminating the ceramic green sheets including the conductive via and theelectrode pattern and then thermally compressing the laminated ceramicgreen sheets under a pressure ranging from 30 MPa to 50 MPa.
 6. Themethod of claim 1, wherein the forming of the at least one conductivevia and the electrode pattern comprises forming a via hole by punchingusing a punch, laser processing using a laser beam, or drilling using adrill.
 7. The method of claim 1, wherein the sinter-resistant powder isone of alumina (Al₂O₃), cerium dioxide (CeO₂), zinc peroxide (ZnO₂),zircornia (ZrO₂), magnesia (MgO) and boron nitride (BN).
 8. The methodof claim 7, wherein the sinter-resistant powder has an average diameterranging from 0.3 μm to 1 μm.
 9. The method of claim 1, wherein theselective forming of the shrinkage inhibiting thin film comprisesdisposing a pattern mask on at least one of the two surfaces of theceramic laminate to expose the region including the conductive via andthe periphery of the conductive via, and depositing the shrinkageinhibiting thin film only on the region, exposed by the pattern mask, inthe at least one of the two surfaces of the ceramic laminate.
 10. Themethod of claim 9, wherein the exposed region is a region including atleast the conductive via.
 11. The method of claim 1, wherein theselective forming of the shrinkage inhibiting thin film comprisesdepositing the shrinkage inhibiting thin film on the entirety of the atleast one of the two surfaces of the ceramic laminate.
 12. The method ofclaim 1, wherein the shrinkage inhibiting thin film has a diameterranging from 100 μm to 500 μm.
 13. The method of claim 1, wherein theshrinkage inhibiting thin film has a thickness ranging from 3 μm to 20μm.
 14. The method of claim 1, wherein the sinter-resistant powder andthe shrinkage inhibiting green sheet are sintered at a higher sinteringtemperature than the non-sintered multilayer ceramic substrate.